cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 1/9 mta025p01n6 cystek product specification p-channel enhancement mode power mosfet mta025p01n6 bv dss -14v i d @v gs =-4.5v, t c =25 c -7.1a i d @v gs =-4.5v, t a =25 c -6.0a 22.5m v gs =-4.5v, i d =-4.5a v gs =-2.5v, i d =-2.2a 30.3m r dson(typ) v gs =-1.8v, i d =-2.2a 49.0m features equivalent circuit ? simple drive requirement mta025p01n6 ? low on-resistance ? small package outline ? pb-free lead plating and halogen-free package g gate s source d drain absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -14 gate-source voltage v gs 8 v t c =25 c, v gs =-4.5v -7.1 t c =70 c, v gs =-4.5v -5.7 t a =25 c, v gs =-4.5v (note 1) -6.0 continuous drain current t a =70 c, v gs =-4.5v (note 1) i d -4.8 pulsed drain current (note 2, 3) i dm -40 a t c =25 c 3.1 t c =70 c 2.0 t a =25 c (note 1) 2.0 total power dissipation t a =70 c (note 1) p d 1.25 w operating junction temperature and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 40 thermal resistance, junction-to-ambient, max (note 1) r ja 62.5 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec. 156 /w when mounted on minimum copper pad. 2.pulse width limited by maximum junction temperature. 3.pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 2/9 mta025p01n6 cystek product specification electrical characteristics (ta=25c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -14 - - v v gs =0v, i d =-250 a bv dss / tj - -3 - mv/ reference to 25 , i d =-250 a v gs(th) -0.4 - -1 v v ds =v gs , i d =-250 a i gss - - 100 v gs =8v, v ds =0v - - -100 na v ds =-12v, v gs =0v, tj=25 i dss - - -10 a v ds =-12v, v gs =0v, tj=55 - 22.5 31.0 i d =-4.5a, v gs =-4.5v - 30.3 41.5 i d =-2.2a, v gs =-2.5v *r ds(on) - 49.0 66.0 m i d =-2.2a, v gs =-1.8v *g fs - 13 - s v ds =-5v, i d =-5a dynamic ciss - 1074 - coss - 226 - crss - 191 - pf v ds =-10v, v gs =0v, f=1mhz t d(on) - 14.8 - t r - 21.8 - t d(off) - 105.6 - t f - 59.2 - ns v ds =-10v, i d =-1a, v gs =-4.5v, r g =6 ? qg - 13.8 - qgs - 2.1 - qgd - 4.2 - nc v ds =-10v, i d =-4a, v gs =-4.5v source-drain diode *i s - - -4 *i sm - - -16 a *v sd - -0.77 -1 v i s =-1a,v gs =0v *t rr - 80 - ns q rr - 68 - nc i s =-4a,v gs =0v,di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTA025P01N6-0-T1-G sot-26 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 3/9 mta025p01n6 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =1.5 v 2 v 10v,9v,8v,7v,6v,5v,4 2.5v 3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-10v v gs =-1.8v v gs =-2.5v v gs =-4.5v v gs =-1.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) v gs =-2.5v, i d =-2.2a r dson @tj=25c : 30.3m typ. i d =-4.5a v gs =-4.5v, i d =-4.5a r dson @tj=25c: 22.5m typ.
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 4/9 mta025p01n6 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 012345678910 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) pulsed ta=25c v ds =-10v v ds =-5v gate charge characteristics 0 2 4 6 8 10 0 6 12 18 24 30 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-4.5a v ds =-10v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c r ja =62.5c/w, v gs =-4.5v single pulse 1s r ds( on) limited maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) v gs =-4.5v, r ja =62.5c/w
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 5/9 mta025p01n6 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 35 40 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-5v single pulse maximum power dissipation 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) peak transient power (w) t j(max) =150c t a =25c r ja =62.5c/w power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 20 40 60 80 100 120 140 160 t a , ambient temperature() p d , power dissipation(w) mounted on fr-4 board with 1 in 2 p ad area power derating curve 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0 20 40 60 80 100 120 140 160 t c , case temperature() p d , power dissipation(w) transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0. 2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5 c/w
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 6/9 mta025p01n6 cystek product specification recommended soldering footprint
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 7/9 mta025p01n6 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 8/9 mta025p01n6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c089n6 issued date : 2015.11.23 revised date : 2016.03.18 page no. : 9/9 mta025p01n6 cystek product specification sot-26 dimension marking: millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.050 1.250 0.041 0.049 e 1.500 1.700 0.059 0.067 a1 0.000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 1.050 1.150 0.041 0.045 e 0.950 (bsc) 0.037 (bsc) b 0.300 0.500 0.012 0.020 e1 1.800 2.000 0.071 0.079 c 0.100 0.200 0.004 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 6-lead sot-26 plastic surface mounted package cystek package code: n6 style: pin 1. drain (d) pin 2. drain (d) pin 3. gate (g) pin 4. source (s) pin 5. drain (d) pin 6. drain ( d ) a25p device name date code
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